1 Sep
2007
1 Sep
'07
7:18 p.m.
At 05:42 PM 9/1/2007, you wrote:
Awhile back, perhaps early '80s, there was a paper
or monograph from
Tektronix which discussed affects of ESD on TTL. Many people
believe(d) that ESD can damage or destroy MOS parts, but that there
is no effect on TTL parts.
The above publication claimed differently. Stated that although ESD
does not destroy TTL function, immunty to noise and (IIRC) switching
speeds are impacted because of damage to gate structures.
I thought static could poke holes in (that might have been a simple
description) or separate PN / NP junctions which in the end didn't
impact function but current capacity. I think this was specifically
talking about mosfets.
Grant