15 Dec
2018
15 Dec
'18
1:24 p.m.
On Dec 15, 2018, at 1:18 PM, Warner Losh via cctalk
<cctalk at classiccmp.org> wrote:
On Sat, Dec 15, 2018, 1:51 PM Jon Elson via cctalk <cctalk at classiccmp.org
wrote:
And my question is why go through all of that pain when an FRAM or MRAM
device can do this with no hackery?
What you?re describing is the very definition of an ?impedance mismatch?.
You?re trying to use a block oriented device as a byte device and attempting
to paper over the differences. I think the end result would be less than
satisfactory in almost every measurable dimension.
TTFN - Guy
On 12/15/2018 02:45 PM, Anders Nelson via cctalk
wrote:
If you paired it with a microcontroller, you might be able to implement a
log device and then manage to logical to physical translation ala FTLs in
SSD land... but it would be ugly as heck and you'd still have the stall to
worry about when you got to the end of the erase block... better
performance, but maybe beyond a cheap uc? Serial flash has an endurance between 10K-100K
writes per cell so I think
that would break down quickly. Wear-leveling on a serial device would be
very slow...
If you intend to use it as main core memory on an old CPU,
it will perform VERY poorly, as these memories need to erase
a page at a time, and the erase takes milliseconds. So,
writing ONE SINGLE word at a time would invoke an erase
cycle each time, slowing it to 1/1000 or worse the speed of
the original core memory. Also, most old CPUs have the
memory timing built into the CPU, and can't handle a memory
that says "wait".